INVENTO 10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

الوصف

INVENTO 10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE