This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 s Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb?Free Devices Typical Applications Solar Inverter UPS Inverter Applications Induction Heating, Microwave Oven 25N120 1200 V, 25 A NPT Trench IGBT IGW25N120H3 IKW25N120H3 IKW25N120T2 FGA25N120ANTDTU NGTB25N120FL3WG NGTB25N120FL2WG IXGH25N120 IXGH25N120A FGA25N120ANTDTU SKW25N120 SGW25N120 IHW25N120E1 IKW25N120CS7 K25MCS7 H25ME1 SKW25N120 K25N120 All IGBT Are Same 25N120 some difference my be packages and Low saturation voltages VCE(sat)
Brand | Generic |
Manufacturer | Fairchild Semiconductor Corporation |
Number of Memory Sticks | 2 |
Item part number | 25N120 |
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